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Fowler - Nordheim stress of n-type silicon carbide metal-

Bano, E; Ouisse, T; Leonhard, C; Gölz, A; Kamienski, E G Stein von, 1997: High-field Fowler - Nordheim stress of n-type silicon carbide

of two-dimensional silicon carbide-based p–n junctions-

A silicon carbide device is fabricated by forming a plurality of a same type of silicon carbide devices on at least a portion of a silicon carbide

EP0133343A1 - Granular silicon carbide abrasive grain coated

@ improved granular abrasive material (22) comprises silicon carbide particles (23) at least partially coated with an integral, durable surface layer (24)

SAE AMS2449A Grinding of HVOF Sprayed Tungsten Carbide

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Chemical Mechanical Polishing of Cubic Silicon Carbide Films

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C-Face 4H-Silicon Carbide Wafer by Chlorine Trifluoride Gas

Figure 2. Gas distributer used in the silicon carbide dry etcher. Surface morphology of C-face 4H-Si wafer after etching by chlorine

Formation of Silicon Carbide Using Volcanic Ash as Starting

International Journal of Photoenergy is a peer-reviewed, Open Access journal that publishes original research articles as well as review articles in all

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2019328-A resource-utilization strategy of the waste PCBs was developed: preparation of high value-added silicon carbide (SiC) nanoparticles using t

Exposure of Tantalum Carbide, Silicon Nitride and Aluminum

Exposure of Tantalum Carbide, Silicon Nitride and Aluminum Nitride to Chlorine(Downloading may take up to 30 seconds. If the slide opens in your

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STPSC10065 - 650 V power Schottky silicon carbide diode - ST

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2019313-In this work, the stability and electronic structure of zigzag double-walled silicon carbide nanotubes (DWSiCNTs) (6,0)@(n,0) (with n=11

contact mobility measurements of graphene on silicon carbide

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Effect of Silicon Carbide Conductive Adhesive on the

Download Citation on ResearchGate | Effect of Silicon Carbide Conductive Adhesive on the Performance of Electric-explosive Device | To study the effect of

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EP2033212B1 - Method of forming a silicon carbide pmos device - Google In these devices, a p-base region and an n+ source region are diffused

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A method to reinforce dental porcelain with silicon carbide fibers was presented. The results indicated that an increase in fracture strength is possible

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of aluminum nitride: silicon carbide alloys - Google Patents

Bulk, low impurity aluminum nitride:silicon carbide (AlN:SiC) alloy single crystals are grown by deposition of vapor species containing Al, Si, N and C

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of two-dimensional silicon carbide-based p–n junctions-

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US6214108B1 - Method of manufacturing silicon carbide single

Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened