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CivalekHigher-order continuum theories for buckling responseof silicon carbide nanowires (SiCNWs) on elastic matrixReceived: 10 May 2017 / Accepted: 26
CivalekHigher-order continuum theories for buckling responseof silicon carbide nanowires (SiCNWs) on elastic matrixReceived: 10 May 2017 / Accepted: 26
S. K. Lilov, 2008: Investigation of the growth processes from vapor phase of silicon carbide epitaxial layers: Thermodynamic analysis of the high
The invention relates to a method for producing a shaped body that contains at least 85 vol. % crystalline silicon carbide and at most 15 vol. %
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Lu, X.; Lee, J.Y.; Feng, P.X-L.; Lin, Q., 2013: Silicon carbide microdisk resonator We demonstrate a silicon carbide (SiC) microdisk resona
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Bano, E; Ouisse, T; Leonhard, C; Gölz, A; Kamienski, E G Stein von, 1997: High-field Fowler - Nordheim stress of n-type silicon carbide
Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of
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