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A method of producing a heterophase graphite, including the steps of (A) providing a silicon carbide single-crystal substrate; (B) placing the silicon
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-by-layer growth of unconstrained, heteroepitaxial single-crystalline graphite.Solid-state decomposition of silicon carbide for growing ultra-thin
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graphite crystals, and is the major reason for the materials high cost. Carbon fibre-reinforced silicon carbide (C/SiC) is a development of pure
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A method and an apparatus for manufacturing a reaction bonded silicon carbide by the infiltration of molten metal by using a porous silicon carbide/carbon
Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance,
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Annotation Titanium carbide was synthetized by sputtering graphite target on heated titanium substrate by magnetron sputtering process. The obtained samples
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